搜索结果: 1-15 共查到“知识库 电子科学与技术 silicon”相关记录27条 . 查询时间(0.105 秒)
Analytical modeling of silicon carbide MESFET
Silicon carbide mathematics software the physical devices analog channel current
2014/12/31
This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to find the characteristics of SIC ME...
Robust Signaling Techniques for Through Silicon Via Bundles
Through Silicon Via 3D Integration VLSI Signaling techniques Robustness
2014/12/8
3D circuit integration is becoming increasingly important as one of the remaining techniques for staying on Moore’s law trajectory. 3D Integrated Circuits (ICs) can be realized using the Through Silic...
The effect of heat on the metallurgical structure and B-H characteristic of (stator) armature with iron-silicon alloy in electric machines
Heat effect on material magnetic (B-H) characteristic microstructure of material removal of the burned windings
2010/10/12
Coils in electric machines are varnished for insulation after winding. These varnished coils are formed in stiff construction in slots. Under heavy-duty operating conditions, all or part of some coils...
Quenching of High-Pressure Phases of Silicon Using Femtosecond Laser-driven Shock Wave
Femtosecond laser Silicon Shock wave
2009/6/1
High-pressure phases which are Β-Sn, Imma and simple hexagonal structures of silicon are quenched using an intense femtosecond laser-driven shock wave. These high-pressure phases have never synthesize...
Silicon-Based Light Sources for Silicon Integrated Circuits
Silicon-Based Light Sources Silicon Integrated Circuits
2009/5/19
Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing,...
GaN-on-Si is thought to be an approach for low cost RF power electronics [1]. However, the
performance of the GaN-HFET devices is influenced by the Si-substrate properties, the buffer
layer interfac...
GaN-on-Si is thought to be an approach for low cost RF power electronics [1]. However, the
performance of the GaN-HFET devices is influenced by the Si-substrate properties, the buffer
layer interfac...
Analysis on SOI(Silicon-on-Insulator)-based MMICs(Multimode Interference Couplers) with different thickness of upper Silicon layer
SOI MMICs thickness Silicon layer MMI
2010/7/16
It is compared with each other that MMIs made of SOI wafers with different thickness of upper Si layer have different properties. MMI coupler made of SOI wafers with thinner Si layer has better self-i...
A silicon LED in standard CMOS technology for optical interconnection
silicon LED CMOS optical interconnection
2010/7/16
A silicon light emitting device is designed and simulated. It is fabricated in 0.6μm standard CMOS technology. The device can give more than 1μW optical power of visible light under reverse breakdown....
Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes
Silicon Anisotropic etching NaOH etchant Tensorial and kinematic model Simulator TENSOSIM
2010/12/7
The simulation of 2D etching shapes such as surface profiles and out-of-roundness profiles related to various (h k 0) and (h h l) silicon plates or cross-sections is studied. The theoretical basis of ...
Passive On-Chip Components for Fully Integrated Silicon RF VCOs
Passive On-Chip Components Integrated Silicon RF VCOs
2010/12/7
In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable ...
Silicon Micromachining for High Performance Passive Structures at W Band
Micromachined Silicon Whispering gallery mode 3D FEM simulation Millimeter-wave
2010/12/7
This paper presents a micromachined technology allowing the realization of very high aspect ratio millimeter-wave circuits. Appropriate 3D electromagnetic simulations based on the finite element metho...
Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h l) Silicon Plates in a NaOH 35% Solution. Part II: 3D Etching Shapes, Analysis and Comparison with KOH 56%
the Chemical Etching (h k 0) and (h h l) Silicon Plates a NaOH 35% Solution KOH 56%
2010/12/8
This paper deals with the micromachining of various (h k 0) and (h h l) membrane–mesa structures in a NaOH 35% solution. Final etching shapes of micromachined structures show a marked anisotropy of ty...
New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells
Heavy doping effects Transparent emitter Silicon solar cell Modeling-thin layer
2010/12/7
In this study we have determined new coefficients for the physical model describing the band-gap narrowing and the minority carriers lifetime. This was accomplished according to the doping level of th...
New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells
Heavy doping effects Transparent emitter Silicon solar cell Modeling
2010/12/8
In this study we have determined new coefficients for the physical model describing the band-gap narrowing and the minority carriers lifetime. This was accomplished according to the doping level of th...
