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Phase transition induced vertical alignment of ultrathin gallium phosphide nanowire arrays on silicon by chemical beam epitaxy
Biochemical engineering Green chemistry Sustainable chemistry Universities of Applied Sciences
2016/12/2
We demonstrate high-density heteroepitaxial growth of sub-10 nm diameter gallium phosphide (GaP) nanowire (NW) arrays on silicon (Si), using chemical beam epitaxy (CBE). The vertical alignment of GaP ...
