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New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature
MOS transistor Drain saturation voltage Substrate current
2010/12/8
A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested ...
A Quantitative Analysis of Tunneling Current in A MOS Cell for A Low-Voltage Microcontroller
Tunneling current EEPROM oxide thickness
2010/12/10
The tunneling current density in a MOS cell for a low-voltage microcontroller based on EEPROM is calculated for high electric strengths. Furthermore, this current density is discussed in terms of the ...
Analysis and Modeling of Depletion-Mode MOS Transistors
Depletion-Mode MOS Transistors mode MOSFET
2010/12/13
Masuhara et. al (1972) developed a model for analysis of this device as an enhancement mode MOSFET. The model was adequate for analysis of lightly-doped, shallow-implanted channels. Subsequently, a mo...