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Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: An atomistic analysis
silicon nanowire mobility p-type holes atomistic bandstructure
2010/11/22
The mobility of p-type nanowires (NWs) of diameters of D=12nm down to D=3nm, in [100], [110], and [111] transport orientations is calculated. An atomistic tightbinding model is used to calculate the N...
Fabrication and characterization of high quality factor silicon nitride nanobeam cavities
Fabrication characterization quality factor silicon nitride nanobeam cavities
2010/11/9
Si3N4 is an excellent material for applications of nanophotonics at visible wavelengths due to its wide bandgap and moderately large refractive index (n $\approx$ 2.0). We present the fabrication and ...
