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Temporal behavior of the inverse spin Hall voltage in a magnetic insulator-nonmagnetic metal structure
Temporal behavior inverse spin Hall voltage magnetic insulator-nonmagnetic metal structure
2010/11/18
The time dependence of an inverse spin Hall (iSHE) voltage in a magnetic insulator (yttrium
iron garnet, YIG)-nonmagnetic metal (platinum, Pt) structure is studied. A flow of spin-polarized electrons...
Voltage controlled spin precession in InAs quantum wells
Voltage controlled spin InAs quantum wells
2010/11/18
In this work we demonstrate that the device presented by Koo et al. [Science 325, 1515 (2009)]
in InAs quantum wells has indeed realized the Datta-Das spin-injected field effect transistor. The oscil...
Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors
Room Temperature Coherent Voltage Tunable Terahertz Emission
2010/11/24
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage...
Capacitance-voltage profiling techniques for characterization of semiconductor materials and devices
Capacitance-voltage profiling techniques characterization of semiconductor materials devices
2010/11/23
This work re-defines the well-known C-V (capacitance-voltage)measurement technique, in the view of a new physics formula,discovered in 2006 [1].
Current-Voltage Characteristics and Photoresponse of Metal Metal Devices
Photoresponse Metal Metal Devices
2010/4/19
Thin films (35 \AA) of Al2O3 on glass slides have been used for the fabrication of Al/Al2O3/Al, Ag/Al2O3/Al and Cu/Al2O3/Al devices. The room temperature current-voltage characteristics and the depend...