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Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
BPW34 PIN Photodiode reverse bias current transport
2010/4/12
Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transp...
Structure, morphology and magnetism of an ultra-thin [NiO/CoO]/PtCo bilayer with perpendicular exchange bias
magnetism exchange bias MOKE synchrotron light
2010/7/5
Electronic and magnetic properties of nanoscale materials are closely related to the atomic arrangement at the interface shared by different chemical elements. A very precise knowledge of the surface/...
Influence of the Substrate Bias Voltage on the Crystallographic Structure and Surface Composition of Ti6A14V Thin Films Deposited by rf Magnetron Sputtering
Sputtering Bias Steel
2010/9/29
In this work, the influence of the substrate bias on the crystalline structure and surface composition of Ti6Al4V thin films prepared by rf magnetron sputtering were studied. Samples were grown onto t...
