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Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field
Coulomb Oscillations Indium-doped ZnO Nanowire Transistors Magnetic Field
2010/11/9
We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to ...
Feasibility of the GaInP/InGaAs/GaAs System for Modulation Doped Field-Effect Transistors
GaInP/InGaAs/GaAs System Modulation Doped Field-Effect Transistors
2010/4/16
Si-doped single Ga0.51In0.49P layers and GaInP/InGaAs/GaAs modulation doped field-effect transistor structures grown by gas source molecular beam epitaxy were characterized in detail through Hall-Effe...
