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High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
High growth rate 4H-SiC epitaxial growth hot-wall CVD reactor
2010/11/18
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical
vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We
discuss the use of dichlorosil...
