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Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Interface Trap Density Metrology state-of-the-art undoped Si n-FinFETs
2010/11/22
The presence of interface states at the MOS interface is a well-known cause of device gradation.This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can stron...
DMRG Studies on Properties of Undoped and Doped Molecule-Based Ferromagnetic
Chain
DMRG antiferromagnetic exchange SDW spin density undoped doped
2007/8/15
2005Vol.44No.6pp.1099-1102DOI:
DMRG Studies on Properties of Undoped and Doped Molecule-Based Ferromagnetic
Chain
YAO Kai-Lun,1,2 QIN Yi,1 LIU Qing-Mei,1 and LIU Zu-Li1
...
专著信息
书名
Undoped Gallium Antimonide Studied by Positron Annihilation Spectroscopy
语种
英文
撰写或编译
作者
S.K. Ma,C.C. Ling,H.M. Weng,and D.S. Hang
第一作者单位
出版社
Mat. Res. Soc. Symp. Proc. 799, Z5.30.1 (2004)
出版地
...
专著信息
书名
Electron-irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence
语种
英文
撰写或编译
作者
Ma,S K,Lui,M K,Ling,C C,Fung...
Exciton Investigations and the Urbach Tails of Gd Doped and Undoped GaSe
GaSe GaSe:Gd exciton Urbach tails binding energy phase transition
2010/4/15
Absorption measurements were carried out in GaSe and GaSe:Gd samples in temperature range 10-320 K in steps 10 K. The first and the second (n=1 and n=2) excitonic levels were marked. The first exciton...
