搜索结果: 1-15 共查到“物理学 Si”相关记录110条 . 查询时间(0.081 秒)
优异的热稳定性和耐毒性等关键性能指标对开发实用型的单原子催化剂至关重要。铂基催化剂凭借其优异的催化活性被广泛应用于VOCs的催化氧化，然而，实际工况下VOCs废气组分复杂，铂单原子催化剂由于高暴露的原子活性位点极易与H2O、SO2等杂质气体大面积接触而发生中毒失活的现象。因此，研究人员重点致力于提高单原子Pt催化剂在VOCs催化燃烧领域的耐毒性研究。特别是含水工况下，单原子Pt基催化剂极易失活，限...
场效应晶体管（FET）是半导体芯片的核心部件，其尺寸大小决定了芯片的集成密度。而FET晶体管的终极物理尺寸，很大程度上取决于在栅极处Si/SiO2界面的结构和性能：界面的尺寸过大会导致集成度降低，芯片性能下降；界面的尺寸小，晶体管中源极到漏极之间的电流会受到量子隧穿效应的影响，导致明显的漏电和高的能耗。当前芯片中晶体管的栅极长度（即源极到漏极间的距离）实际上已经达到了几纳米的尺寸，如台积电最新的5...
借助石墨烯实现Si（100）衬底上单晶GaN薄膜的外延生长（图）
石墨烯 Si（100）衬底 单晶GaN薄膜 外延生长
2019/10/12
近日，北京大学物理学院宽禁带半导体研究中心沈波和杨学林课题组与俞大鹏、刘开辉课题组合作，成功实现了Si(100)衬底上单晶GaN薄膜的外延生长，相关工作于2019年7月23日在Advanced Functional Materials上在线刊登 [doi.org/10.1002/adfm.201905056]。GaN基宽禁带半导体具有带隙大、击穿电场高、饱和电子漂移速度大等优异，能够满足现代电子技...
采用基于密度泛函理论的第一性原理方法，研究了压力作用下Mg2Si和Mg2Ge的结构、弹性和热力学性质。计算结果表明：0 GPa压力作用下两者的晶格参数与实验值以及其他理论值吻合较好，且相对晶格常数a/a0和晶胞体积V/V0均随压力的增大而减小；在0~25 GPa压力作用下，Mg2Si和Mg2Ge相体模量B、剪切模量G、杨氏模量E均随压力的增大而增大，材料的刚度和塑性均增强，当压力达到15 GPa时...
磁性金属/Si异质结横向光伏效应的低磁场调控（图）
磁性金属/Si异质结横向光伏效应 低磁场调控
2014/12/27
磁电子学在新一代信息技术上具有巨大潜力，一直是国际上关注的热点。有关工作可以分为两个方面。一是利用自旋霍尔效应、自旋赛贝克效应以及电子隧穿效应产生与操纵自旋流，这一领域已经有大量的工作。另一个重要的发展趋势是利用磁场调控半导体内电子的运行轨迹：通过把磁场直接作用于半导体，利用洛仑兹效应偏转电子轨道，获得电子行为的磁调控。但是，由于常规半导体对磁场不敏感，所需要的磁场通常很高，为几个甚至十几特斯拉。...
利用磁过滤电弧离子镀技术在高速钢基体上制备了不同Si含量的Ti-Al-Si-N薄膜, 研究了Si含量对薄膜组织结构以及力学性能的影响. 结果表明, Ti-Al-Si-N薄膜主要由晶态TiAlN和非晶态的Si3N4组成, 随着Si含量的增加, XRD衍射峰强度减弱, 晶粒尺寸减小; 薄膜的显微组织也由明显的柱状晶转变为致密的纳米晶结构. 利用纳米硬度仪对薄膜的硬度和弹性模量进行了分析, 结果表明, ...
Robust design of Si/Si3N4 high contrast grating mirror for mid-infrared VCSEL application
High contrast grating mirror mid-infrared VCSEL Robust design
2012/5/28
A Si/Si3N4 high contrast grating mirror has been designed for a VCSEL integration in mid-infrared ({\lambda} = 2.65 $\mu$m). The use of an optimization algorithm which maximizes a VCSEL mirror quality...
Unusual pattern formation on Si(100) due to low energy ion bombardment
Unusual pattern formation Si(100) low energy ion bombardment
2012/2/27
In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\degree-83\degree. Si(100) substrates were ...
Low-loss amorphous Si waveguides with gradient refractive index cladding structure
Low-loss amorphous waveguides gradient refractive index cladding structure
2013/7/3
Amorphous Si waveguides with gradient refractive index cladding structure are proposed and fabricated using plasma-enhanced chemical vapor deposition method. Compared with 6 dB/cm for ridge waveguide ...
Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential
Molecular dynamics simulation amorphous Si layers the recrystallization velocity
2011/8/3
Abstract: The molecular dynamics method is applied to simulate the recrystallization of an amorphous/crystalline silicon interface. The atomic structure of the amorphous material is constructed with t...
Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor
Magnetoresistivity Acoustoelectronic Effects
2010/11/25
Magnetoresistivity xx and xy and the acoustoelectronic effects are measured in p-Si/SiGe/Si
with an impurity concentration p = 1.99 × 1011 cm−2 in the temperature range 0.3–2.0 K and an tilte...
Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping
Bond-specific reaction kinetics oxidation of (111) Si Effect of n-type doping
2010/11/24
It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not...
Measurements of nuclear $\gamma$-ray line emission in interactions of protons and $\alpha$ particles with N, O, Ne and Si
Measurements of nuclear $\gamma$-ray line emission interactions of protons $\alpha$ particles with N, O, Ne and Si
2011/1/4
$\gamma$-ray production cross sections have been measured in proton irradiations of N, Ne and Si and $\alpha$-particle irradiations of N and Ne. In the same experiment we extracted also line shapes fo...
Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces
Comparison of Graphene Formation Si-face SiC {0001} Surfaces
2010/11/19
The morphology of graphene formed on the ( 0001 ) surface (the C-face) and the (0001) surface
(the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is studied by atomic ...
Hybridization wave as the 'Hidden Order' in URu$_2$Si$_2$
Hybridization wave URu$_2$Si$_2$
2010/11/25
A phenomenological model for the ’hidden order’ transition in the heavy Fermion material
URu2Si2 is introduced. The ’hidden order’ is identified as an incommensurate, momentum-carrying hybridization ...