搜索结果: 1-15 共查到“物理学 Oxide”相关记录31条 . 查询时间(0.064 秒)
Chemical Synthesis of Nano-Sized particles of Lead Oxide and their Characterization Studies
Nanoparticles lead oxide chemical method semiconductor band gap
2012/4/19
The quantum dots of semiconductor display novel and interesting phenomena that have not been in the bulk material. The color tunability is one of the most attractive characteristics in II-VI semicondu...
Thermochromism of Silver Oxide for Optical Switching Layers in Volumetric Optical Disks
phase change volumetric optical disk dual layer optical disk optical switching layer thermo-chromatic material thermochromism silver oxide
2011/11/28
For reading and writing on a lower targeted recording layer ofvolumetric optical disks, transmitted laser power is decreased by absorption and reflection ofthe upper layers. Thus, a layer ofthermo-chr...
We report the fabrication of nanoparticle silver oxide thin films by rf magnetron sputtering and characterization of their nonlinear optical properties. The chemical decomposition and reversibility of...
First principles investigation of Bi$_6$Ti$_4$O$_{17}$: oxide ferroelectricity with a low band gap
First principles investigation low band gap
2010/11/25
We report first principles studies of the hypothetical compound Bi6Ti4O17, which is an alternate stacking of the ferroelectric Bi4Ti3O12. We find that this compound is ferroelectric, similar to Bi4Ti3...
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Double quantum dot enhancement-mode silicon lateral geometry
2010/11/17
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device...
Magnetotransport and spin dynamics in an electron gas formed at oxide interfaces
Magnetotransport spin dynamics oxide interfaces
2010/11/23
We investigate the spin-dependent transport properties of a two-dimensional electron gas formed
at oxides’ interface in the presence of a magnetic field. We consider several scenarios for the oxides’...
Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
Field-induced water electrolysis switches oxide semiconductor
2010/11/23
Water is composed of two strong electro-chemically active agents, H+ and OH– ions,for oxide semiconductors though water has never been utilized as an active electronic material. Here we demonstrate th...
Metal-Insulator Transition and Magnetic Order in the Pyrochlore Oxide Hg2Ru2O7
pyrochlore structure ruthenium oxide Hg2Ru2O7 NMR metal-insulator transition magnetic magnetic
2010/11/17
We report results of NMR experiments on the ruthenium oxide Hg2Ru2O7 with the py-rochlore structure, which exhibits a metal-insulator transition at TMI = 107 K. In the metallic
phase above TMI, the n...
Interactions between sub-10 nm iron and cerium oxide nanoparticles and 3T3 fibroblasts : the role of the coating and aggregation state
Nanoparticle Magnetism Cell proliferation Cell viability Fibroblast Polyacrylic acid
2010/11/19
Recent nanotoxicity studies revealed that the physico-chemical characteristics of engineered nanomaterials play an important role in the interactions with living cells. Here, we report on the toxicity...
Thermally induced 0-pi phase transition in Josephson junctions through a ferromagnetic oxide film
Thermally induced 0-pi phase transition Josephson junctions through ferromagnetic oxide film
2010/11/9
We investigate the Josephson transport through a ferromagnetic oxide film, e.g., La$_2$BaCuO$_5$, theoretically. Using the recursive Green's function technique, we found the formation of a pi-junction...
Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
Thin films ITO ARE
2010/7/8
Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for fi...
Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide
silicon on insulator total-dose irradiation effect H gate subthreshold charge separation photoluminescence
2009/7/31
In this work, we investigate the back-gate I-V characteristics for two kinds of NMOSFET/ SIMOX transistors with H gate structure fabricated on two different SOI wafers. A transistors are made on
the ...
Influence of Drying on the Characteristics of Zinc Oxide Nanoparticles
zinc oxide drying process nanoparticle
2010/7/5
The recent growth in the field of porous and nanometric materials prepared by non-conventional processes has stimulated the search of new applications of ZnO nanoparticulate. Zinc oxide is an interest...
Incommensurate Magnetic Fluctuations in the Underdoped
Copper Oxide Materials
incommensurate magnetic fluctuations t-J model fermion-spin theory
2007/8/15
2001Vol.36No.3pp.370-374DOI:
Incommensurate Magnetic Fluctuations in the Underdoped
Copper Oxide Materials
YUAN Feng,1,2,3 FENG Shi-Ping1,2,3 and CHEN Wei-Yeu4
1 Departm...
The Role of Silicon Oxide Layers in Luminescence of
Ensembles of Silicon Quantum Dots
silicon oxide layer quantum dot luminescence
2007/8/15
2001Vol.35No.3pp.371-380DOI:
The Role of Silicon Oxide Layers in Luminescence of
Ensembles of Silicon Quantum Dots
WANG Si-Hui,1,2 QIN Guo-Yi,1 REN Shang-Fen3 and
QIN Guo-Gang4,5
...
