搜索结果: 1-15 共查到“物理学 GA”相关记录32条 . 查询时间(0.046 秒)
2013年7月9日，《物理评论快报》 (Phys. Rev. Lett.111, 027203 2013)报道了中科院半导体研究所半导体超晶格国家重点实验室赵建华研究组及合作者在(Ga,Mn)As/Co2FeAl双层膜铁磁界面耦合和磁邻近效应方面取得的最新研究成果。
汽车声品质的GA-BP网络预测与权重分析
车内噪声 声品质预测 GA-BP神经网络 权重分析
2014/3/14
为了高效而准确地评价与控制车内噪声品质，以B级车稳态工况下副驾位置的车内噪声为研究对象，采用等级评分法对采集到的声音样本进行了主观评价试验，同时计算了7个客观参数。以客观参量为输入，声品质主观结果为输出，引入基于遗传算法的BP神经网络建立了声品质预测模型。实验显示该模型输出结果与实际评分的相关系数达到0.928，检验组的预测最大误差为±8%。以所建模型的连接权值，分析了客观参数对主观评价结果的贡献...
High-spin structure of odd $^{71-81}$Ga isotopes with shell model
shell model isotopes High-spin structure
2011/7/20
The recently measured experimental data of Argonne National Laboratory for high-spin states in neutron-rich $^{71,73,75,77}$Ga isotopes have been interpreted in the framework of large-scale shell mode...
Effects of s,p - d and s - p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N
exchange interactions exciton magnetospectroscopy
2010/11/25
Near band-gap photoluminescence and reflectivity in magnetic field are employed to determine the exchange-induced splitting of free exciton states in paramagnetic wurtzite Ga1−xMnxN, x . 1%,grow...
Atomistic theory of spin relaxation in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field
Atomistic theory spin relaxation zero magnetic field
2010/11/25
We present full atomistic calculations of the spin-flip time (T1) of electrons and holes mediated by acoustic phonons in self-assembled In1−xGaxAs/GaAs quantum dots at zero magnetic field. At lo...
Element specific characterization of heterogeneous magnetism in (Ga,Fe)N films
Element specific characterization heterogeneous magnetism
2010/11/18
We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy
constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photo-
electro...
Ab-initio study of the bandgap engineering of Al(1-x)Ga(x)N for optoelectronic applications
Ab-initio study of the bandgap engineering optoelectronic applications
2010/11/18
A theoretical study of Al1-xGaxN, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of th...
Fabrication and characterization of a Ni-Mn-Ga uniaxially textured freestanding film deposited by DC magnetron sputtering
DC magnetron sputtering freestanding Ni-Mn-Ga thick film martensitic transformation
2010/11/22
Homogeneous freestanding films have been obtained by the direct current (DC) magnetron sputtering technique using a sacrificial layer. After annealing, the films are crystallized with a strong out-of-...
Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
Local spin valve effect lateral (Ga,Mn)As/GaAs spin Esaki diode devices
2010/11/19
We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor
all-electrical spin injection devices, employing p+−(Ga,Mn)As/n+−GaAs Esaki diode structure...
Conduction of DNA molecules attached to a disconnected array of metallic Ga nanoparticles
Conduction of DNA molecules disconnected array of metallic Ga nanoparticles
2010/11/17
We have investigated the conduction over a wide range of temperature of DNA molecules deposited across slits etched through a few nanometers thick platinum lm. The slits are insulating before DNA d...
Tuning macro-twinned domain sizes and the b-variants content of the adaptive 14-modulated martensite in epitaxial Ni-Mn-Ga films by co-sputtering
Magnetic shape memory alloys epitaxial films adaptive modulated-martensites twinning
2010/11/19
order to obtain modulated-martensite in our epitaxial Ni-Mn-Ga films, we have tuned the composition by using a co-sputtering process. Here we present how the composition affects the variant distributi...
Production of YBCO Superconductor Sample by Powder-In-Tube Method (PITM); and Effect of Cd and Ga Doping on the System
Superconducting composites YBCO composition Powder-In-Tube method Cd and Ga doping
2010/4/8
In this study, YBa2Cu3O7-d and Y0.5X0.5Ba2Cu3O7-d (x = Ga, Cd) compounds are produced by Powder-In-Tube Method and electrical and physical characteristics of those samples were investigated. Following...
用赝势微扰法计算某些半导体的能带结构(用于GaAs,GaP和Ga[As1-xPx]合金)
2007/12/12
用赝势微扰法计算了GaAs,GaP和Ga[As1-xPx]合金的能带。赝势选择的原则是使计算所得直接能隙和间接能隙与实验值相符合。计算结果表明,不但能带次序准确,而且与室温下的实验值符合得很好。基于由GaAs到GaP晶格常数和赝势是线性变化的假设,计算了GaP含量为20％,50％和80％时Ga[As1-xPx]合金的能带。当GaP含量为41％时,直接能隙和间接能隙相等,这一数值刚好是Spitzer...
First-Principles Studies for the Electronic Structures of Diluted
Magnetic Semiconductors (Ga, Fe)As
diluted magnetic semiconductor electronic band calculation
ferromagnetism
2007/8/15
2003Vol.40No.4pp.499-502DOI:
First-Principles Studies for the Electronic Structures of Diluted
Magnetic Semiconductors (Ga, Fe)As
WEI Shu-Yi, WANG Tian-Xing, YANG Zong-Xian, and ...