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Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy
Vertical Alignment Ultrathin Gallium Phosphide Nanowire Arrays Silicon Chemical Beam Epitaxy
2016/12/2
CBE and CVD were performed in an ultra-high vacuum (UHV) system. The background pressure was kept at 1 × 10-10 mbar. The Au was deposited by MBE on a hydrogen terminated Si substrate with a surface te...
Optical and Structural Properties of GaAs/GaInP Quantum Wells Grown by Chemical Beam Epitaxy
GaAs/GaInP Quantum Wells Chemical Beam Epitaxy
2010/10/21
In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), phot...
Butt-Coupling Loss of 0.1 dB/Interface in InP/InGaAs Multi-Quantum-Well Waveguide-Waveguide Structures grown by Selective Area Chemical Beam Epitaxy
integrated optics butt-coupling SAE CBE
2010/4/16
The lateral coupling of waveguiding structures in both [011] and [0\bar{1}1] directions is studied using embedded selective area epitaxy by Chemical Beam Epitaxy. All growth steps are carried out unde...
