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The presence of interface states at the MOS interface is a well-known cause of device gradation.This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can stron...
We propose and analyze an interface between a topological qubit and a superconducting flux qubit. In our scheme, the interaction between Majorana fermions in a topological insulator is coherently cont...
We propose a quantum interface protocol based on two quantum-non-demolition interactions (QND) arranged either in sequence or in parallel. Since the QND coupling arises naturally in interactions betwe...
The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface wi...
Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spe...
2006Vol.46No.6pp.1109-1112DOI: Interface-Optical-Phonon Modes in Quasi-one-dimensional Wurtzite Rectangular Quantum Wires ZHANG Li Department of Mechanism and Electron, ...
2003Vol.40No.2pp.225-230DOI: Polar Interface Optical Phonon Modes and Fröhlich Electron-Phonon Interaction Hamiltonians in an Arbitrary Layer-Number Quantum Well System ZHANG...
2003Vol.39No.2pp.238-244DOI: Interface Optical Phonon Modes and Fröhlich Electron-Phonon Interaction Hamiltonian in a Multi-shell Spherical Nanoheterosystem ZHANG Li,1,2 XIE ...
2005Vol.43No.2pp.333-336DOI: Vibration Spectrums of Polar Interface Optical Phonons in GaAs/AlAs Cylindrical Quantum Dots ZHANG Li School of Physics, Peking University, ...
2004Vol.42No.2pp.303-308DOI: Anisotropic Interface Roughness Scattering in a Lateral Superlattice ZHENG Yi-Song, LÜ Tian-Quan, and ZHANG Cheng-Xiang Department of P...
By employing the method of electrostatic potential expansion, the interface optical (IO) and surface optical (SO) phonon modes and the corresponding Fröhlich-like electron-phonon-interaction Hami...
The scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied perpendicular to the layer plane. It is found that the ...
An Au/CuO/Cu2O/Cu sandwich structure has been obtained by growing successive Cu2O and CuO layers on a Cu sheet. A gold metal contact was formed CuO side at pressure of 1\times10-6 Torr. Current-voltag...
The lateral coupling of waveguiding structures in both [011] and [0\bar{1}1] directions is studied using embedded selective area epitaxy by Chemical Beam Epitaxy. All growth steps are carried out unde...
We review our recent results concerning the well-width dependence of the acoustic-phonon-assisted energy relaxation of two-dimensional (2D) warm electrons in modulation-doped GaAs/Ga1-xAlxAs multiple ...

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