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新型HfO2栅介质电特性的理论分析与实验研究
二氧化铪 C-V特性 界面态
2009/1/20
对结合NH4F表面预处理和高温退火新型工艺制作的超薄HfO2栅介质MOS电容的C-V特性进行了模拟仿真和实验研究,理论分析的界面态分布与实验结果吻合.利用高频C-V法计算了平带电压漂移量、氧化层内陷阱电荷密度和界面态密度,比较了不同工艺条件下样品的电参数.结果表明NH4F表面预处理和高温退火新型工艺可以显著降低界面态和氧化层陷阱电荷,从而降低栅极漏电流.
电场辅助阳极连接(Electric fied-assisted anodic bonding)是借助外加电场连接玻璃或陶瓷与金属或半导体的一种精密连接技术。相比传统的熔封或胶接方法,其特点是:连接温度低(低于玻璃软化温度),变形小,不破坏材料物理性能,工艺简单,连接可在真空中进行,也可在保护气氛下进行。由于以上特点,电场辅助阳极连接技术日益受到重视,应用也愈来愈广。该技术侧重于两个方面。第一是阳极...
BLT-Ⅱ型半导体冷凝式氢气干燥系统
半导体 冷凝 氢气干燥
2008/12/9
该产品建立在“珀耳帖效应”的原理上,采用先进的电子制冷方式将氢气除温,专为氢冷电机组和制氢站配置。因不使用氟利昂等制冷剂,免去了添加制冷剂的工作量和费用,有利于对大气环境的保护;没有机械运动部件,安装使用方便安全可靠,制冷除湿效果好。该产品在火电厂氢冷发电机组使用量比较大,推广应用前景十分广阔,具有显著的经济效益和社会效益。
PowerArchitecture许可开放
PowerArchitecture 许可开放
2008/12/4
为了扩展Power ArchitectureTM技术在嵌入式系统市场中的应用,飞思卡尔半导体日前宣布,通过与专业公司IPextreme 签署半导体知识产权(IP)协议,许可其使用e200 内核产品。这一合作的意义在于:片上系统器件(SoC)和特定应用的半导体产品(ASSP)的设计人员将可以在其产品中使用飞思卡尔的e200内核系列产品。
5GHZ半导体超短脉冲光源及光孤子传输
光孤子传输 半导体超短脉冲光源
2008/10/28
成果利用量子阱DFB芯片与自行设计的微带电路组成5GHz增益开关半导体激光器,可产生5GHz超短光脉冲。采用F-P滤波器限制谱宽及利用色散补偿啁啾的方法消除啁啾,获得了5GHz近变换极限光脉冲,其波长为1550nm,脉宽与谱宽的乘积为0.353~0.47,工作稳定。利用自行研制的2.5GHz和5GHz消啁啾半导体超短脉冲激光器,成功实现了2.5GHz、64km,2.5Gb/s、归零随机码信号、53...
多声子复合理论中绝热近似是否失效的问题
多声子 复合理论 绝热近似 失效
2008/10/17
最近,C.H.Henry和 D.V.Lang发表的一文中声称,在发生多声子跃迁的两个电子态的绝热势能位形曲线的交点附近,绝热近似不再适用.本文指出,他们的论断所依据的现象实际上只是反映了在上述交点附近,由于测不准关系,有一个小区域可以发生多声子跃迁,而丝毫不说明绝热近似失效.本文以绝热近似为基础计算出的多声子跃迁几率实际上和他们所采用的理论方法给出的结果完全相同.进一步的讨论表明,对于更普遍的情形...
Ka Band Phase Locked Loop Oscillator Dielectric Resonator Oscillator for Satellite EHF Band Receiver
a Ka Band PLL DRO oscillator the dielectric resonator the active component
2010/12/6
This paper describes the design and fabrication of a Ka Band PLL DRO having a fundamental oscillation frequency of 19.250 GHz, used as local oscillator in the low-noise block of a down converter...
High Efficiency and Broadband Microstrip Leaky-Wave Antenna
tapered design leaky-wave antenna an FDTD code
2010/12/6
A novel layout of leaky-wave antennas based on tapered design has been proposed and investigated. The new tapered leaky-wave antenna (LWA) was designed running a simple procedure which uses an FDTD co...
用MOCVD技术生长GaN: Mg外延膜,在550 ~ 950℃温度范围内,对样品进行热退火,并进行室温Hall、光致发光谱(PL)测试.Hall测试结果表明,850℃退火后空穴浓度达到8e17cm-3以上,电阻率降到0.8Ω·cm以下. 室温PL谱有两个缺陷相关发光峰,位于2.8eV的蓝光峰(BL)以及3.27eV附近的紫外峰(UVL) .蓝光峰对紫外峰的相对强度(BL/UVL)在550℃退火后...
Modification of n-Si Characteristics by Annealing and Cooling at Different Rates
n-Si Annealing Cooling rate J–V plots SEM
2010/12/7
The effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The...
Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor
Real space transfer (RST) Parameter extraction
2010/12/7
The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter e...
MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors
Delta doping Heterojunction bipolar transistor
2010/12/7
The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter curr...
Low Frequency Noise of Tantalum Capacitors
Tantalum capacitors Noise in Tantalum capacitors
2010/12/7
A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capacitors in order to characterise their quality and reliability. The model of Ta−Ta2O5−Mn...
Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors
Functional Stress VDOMS Power Transistors
2010/12/7
The use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. This paper explores the physical analysis and SPICE simulation...