搜索结果: 1-8 共查到“光学仪器及技术 CMOS”相关记录8条 . 查询时间(0.191 秒)
中国科学院合肥物质科学研究院专利：具有光斑脱靶量实时计算功能的高速CMOS相机
A 0.18μm CMOS 1000 frames/sec, 138dB Dynamic Range Readout Circuit for 3D-IC IR Focal Plane Arrays
CMOS 1000 frames/sec Dynamic Range Readout Circuit 3D-IC IR Focal Plane Arrays
2015/8/17
A prototype of a new high dynamic range readout scheme targeted for 3D-IC IR focal plane arrays is described.Dynamic range is extended using synchronous self-reset while high SNR is maintained using f...
一种高帧频CMOS图像传感器系统设计
驱动程序 图像传感器 CMOS MT9M413C36STM TMS320VC33PGE
2014/3/18
利用MT9M413C36STM、TMS320VC33PGE研制了一种高帧频CMOS图像传感器成像、显示及数据处理系统。根据所用器件的特点，文章对图像传感器成像、显示及数据处理原理和时序进行了分析。给出了系统相关的硬件电路，介绍了设计重点。在QuartusⅡ8.0及CC4.1开发环境下，使用VHDL、AHDL、C语言进行了驱动程序编写和调试。结果表明，该系统在1 280×1 024@60 Hz逐行扫...
22 纳米 CMOS技术是全球正在研究开发的最新一代集成电路制造工艺，各国都投入了巨大资金，力争抢占技术制高点。Intel开发的基于三栅器件结构的处理器已于近期实现量产；IBM联盟也于近期发布了采用22纳米工艺生产的SRAM芯片；Global Foundries，欧洲的IMEC，日韩的三星、Toshiba和我国台湾的台积电也发布了各自的22纳米制程技术；我国于2009年在国家科技重大专项的支持下开...
Optical I/O for Chip-to-Chip Interconnects on CMOS Platform
Optical interconnects Subsystem integration and techniques Photonic integrated circuits Polymer active devices Modulators Photodetectors
2015/5/22
Optical devices on a CMOS die and package for terabit computing are discussed.200Gbps transmission is accomplished with a 1x10 VCSEL array. CMOS backend compatible modulators and photodetectors are de...
Compact, Thermally-Tuned Resonant Ring Muxes in CMOS with Integrated Backside Pyramidal Etch Pit
Compact Thermally-Tuned Resonant Ring Muxes CMOS Integrated Backside Pyramidal Etch Pit
2015/5/20
We present add-drop filters manufactured as ring resonators in commercial 130 nm SOI CMOS technology with thermal tuning. Their thermal impedance has been dramatically increased by the selective remov...
0.18μm CMOS 2.5Gb/s光接收机跨阻前置放大器的设计
放大器 光接收机
2009/7/15
给出了一种利用TSMC 0.18 μm CMOS工艺实现的2.5 Gb/s跨阻前置放大器.此跨阻放大器的增益为66.3 dBΩ，3 dB带宽为2.18 GHz，等效输入电流噪声为112.54 nA.在标准的1.8 V电源电压下，功耗为7.74 mW.输入光功率为-10 dBm时，PCML单端输出信号电压摆幅为165 mVp拆.模拟结果表明该电路可以工作在2.5 Gb/s速率上.
Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects
Three-Dimensional Silicon-Germanium Nanostructures CMOS Compatible Light Emitters Optical Interconnects
2009/5/19
Three-dimensional SiGe nanostructures grown on Si (SiGe/Si) using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important sp...