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Study on Mechanism of Domain Inversion in LiNbO3 and LiTaO3 and Its Application of Memory -nm Size Domain Inversion by EB Irradiation-
LiNbO3 LiTaO3 Memory
2009/6/8
The ferroelectric large capacity memory that made direction of the spontaneous polarization of domain inversion correspond to binary values of a memory can be considered as one of the new devices adap...
Topical Papers on Tera Byte World by Optical Memory Technology in Near Future
Tera Byte World Optical Memory Technology Near Future
2009/6/8
Topical Papers on Tera Byte World by Optical Memory Technology in Near Future.
Dynamic Characteristics of a Thin Film Optoelectronic Memory System
Dynamic Characteristics a Thin Film Optoelectronic Memory System
2010/12/13
Thin film electroluminescent cells and photoconducting elements with optical feedback are interesting because of their possible application in optoelectronic memory systems.
PC-EL Type Thin Film Optoelectronic Memory System
the PC-EL system photoconducting element electroluminescent cell
2010/12/16
In the simplest version the PC-EL system was obtained by series connection of a photoconducting element (PC) with an electroluminescent cell (EL). Such a system was supplied with a sinusoidal voltage ...
