搜索结果: 1-15 共查到“电子科学与技术 silicon”相关记录36条 . 查询时间(0.281 秒)
MIT engineers grow “perfect” atom-thin materials on industrial silicon wafers（图）
工业硅晶圆 原子薄材料 芯片
2023/6/6
True to Moore’s Law, the number of transistors on a microchip has doubled every year since the 1960s. But this trajectory is predicted to soon plateau because silicon — the backbone of modern transist...
New ultrathin semiconductor materials exceed some of silicon’s ‘secret’ powers,Stanford engineers find（图）
New ultrathin semiconductor materials silicon secret powers Stanford engineers
2017/9/5
The next generation of feature-filled and energy-efficient electronics will require computer chips just a few atoms thick. For all its positive attributes, trusty silicon can’t take us to these ultrat...
2017年碳化硅和相关材料国际会议（International Conference on Silicon Carbide and Related Materials 2017）
2017年 碳化硅和相关材料 国际会议
2017/3/9
The 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) is the premier biennial meeting covering all aspects of the latest SiC research and development. Scientists, en...
Beyond silicon: New semiconductor moves spintronics toward reality（图）
Beyond silicon New semiconductor spintronics
2015/3/4
A new semiconductor compound is bringing fresh momentum to the field of spintronics, an emerging breed of computing device that may lead to smaller, faster, less power-hungry electronics.Created from ...
Analytical modeling of silicon carbide MESFET
Silicon carbide mathematics software the physical devices analog channel current
2014/12/31
This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to find the characteristics of SIC ME...
Robust Signaling Techniques for Through Silicon Via Bundles
Through Silicon Via 3D Integration VLSI Signaling techniques Robustness
2014/12/8
3D circuit integration is becoming increasingly important as one of the remaining techniques for staying on Moore’s law trajectory. 3D Integrated Circuits (ICs) can be realized using the Through Silic...
The effect of heat on the metallurgical structure and B-H characteristic of (stator) armature with iron-silicon alloy in electric machines
Heat effect on material magnetic (B-H) characteristic microstructure of material removal of the burned windings
2010/10/12
Coils in electric machines are varnished for insulation after winding. These varnished coils are formed in stiff construction in slots. Under heavy-duty operating conditions, all or part of some coils...
Life after silicon（图）
Life silicon silicon transistors
2009/12/15
The huge increases in the power and capacity of computers, cell phones and communications networks in the last 40 years have been the result of ever-shrinking silicon transistors. But silicon transist...
Quenching of High-Pressure Phases of Silicon Using Femtosecond Laser-driven Shock Wave
Femtosecond laser Silicon Shock wave
2009/6/1
High-pressure phases which are Β-Sn, Imma and simple hexagonal structures of silicon are quenched using an intense femtosecond laser-driven shock wave. These high-pressure phases have never synthesize...
Silicon-Based Light Sources for Silicon Integrated Circuits
Silicon-Based Light Sources Silicon Integrated Circuits
2009/5/19
Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing,...
专著信息
书名
Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide
语种
英文
撰写或编译
作者
C. H. Lam,T. W. Lam,C. C. Ling,S. Fung,C. D. Beling,Hang De-Sheng and Weng Huimin
第一作者单位
出版社
J.P...
Structural and electronic properties of metal-encapsulated silicon clusters in a large size range
2007/7/28
专著信息
书名
Structural and electronic properties of metal-encapsulated silicon clusters in a large size range
语种
英文
撰写或编译
作者
Jing Lu,Shigeru Nagase
第一作者单位
出版社
Physical Review?Letters 90 , 115506 (2003).
出...
期刊信息
篇名
Instability of field emission form silicon covered with a oxide due to electron trapping
语种
英文
撰写或编译
作者
黄庆安
第一作者单位
刊物名称
J.Appl.Phys.
页面
1996Vol.79,No.7
出版日期
1996年
月
日
文章标识(ISSN)
相关项目
真空微电子微波三极...
Beyond silicon: New transistor technology may power next microelectronic devices（图）
transistor technology microelectronic devices
2006/12/14
December 12, 2006，MIT engineers have demonstrated a technology that could introduce an important new phase of the microelectronics revolution that has already brought us iPods, laptops and much more.
GaN-on-Si is thought to be an approach for low cost RF power electronics [1]. However, the
performance of the GaN-HFET devices is influenced by the Si-substrate properties, the buffer
layer interfac...