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Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
Metamorphic buffer layer LP-MOCVD HEMT
2010/12/7
In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented ...
Characteristics of MOCVD-Grown High-Quality CdTe Layers on GaAs Substrates
MOCVD-Grown High-Quality CdTe Layers GaAs Substrates
2010/12/14
CdTe epitaxial layers are grown successfully on a (100)-GaAs substrate by metalorganic chemical vapor deposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources. The...
