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Piezoelectric effect and spontaneous polarization in computer modelling of AIII–N heterostructures
AIII–N computer modelling heterostructure 2-dimensional electron gas (2DEG) strain piezoelectric effect spontaneous polarization
2011/4/27
The Ga, Al and In nitrides (AIII–N) are complete material system suitable in high power and high temperature electronic devices such as AlxGa1–xN/GaN heterostructure field effect transistor (HFET). Th...
