搜索结果: 1-10 共查到“光学工程 Vertical-Cavity”相关记录10条 . 查询时间(0.109 秒)
Oxide-Relief Vertical-Cavity Surface-Emitting Lasers with Extremely High Data-Rate/Power-Dissipation Ratios
Oxide-Relief Vertical-Cavity Surface-Emitting Lasers Extremely High Data-Rate/Power-Dissipation Ratios
2015/5/21
By using oxide-relief technique, a high modulation-efficiency (9.8GHz/mA 1/2 ) and a high modulation-speed (34 Gbps) with a record-high data-rate/power-dissipation ratios (2.9 (9.2) Gbps/mW at 34 (12....
High Speed Photonic Crystal Vertical Cavity Lasers
High Speed Photonic Crystal Vertical Cavity Lasers
2015/5/21
The design, fabrication, and performance of single transverse mode high speed photonic crystal vertical cavity surface emitting lasers are reviewed. The stable index guiding from the photonic crystal ...
Chaotic Vertical-Cavity Surface-Emitting Laser for 1.4 GHz Message Transmission
Chaotic Vertical-Cavity Surface-Emitting Laser Message Transmission
2015/7/30
An experimental demonstration of GHz message encoding and decoding in unidirectionally coupled chaotic vertical-cavity surface-emitting lasers with polarisation-preserved optical injection.
Threshold Current Characteristics of Intracavity-contacted Vertical-cavity Surface-emitting Laser
2007/7/28
专著信息
书名
Threshold Current Characteristics of Intracavity-contacted Vertical-cavity Surface-emitting Laser
语种
英文
撰写或编译
作者
H. W. Qu,X. Guo,L. M. Dong,J. Deng,P. Lian,D. S. Zou,G. D. Shen
第一作者单位
出版社
Semi...
专著信息
书名
980nm Qxide-Confined vertical cavity surface emitting laser
语种
英文
撰写或编译
作者
渠宏伟,郭霞,黄静,董立闽,廉鹏,邓军,朱文军,邹德恕,沈光地
第一作者单位
出版社
半导体学报 25(3), 262, 2004
出版地
出版日期
2004年
月
日
标准书号
介质类型
页数
字数
开本
相关项目
新型可调谐高效多...
期刊信息
篇名
Theoretical analysis of multi-transverse mode characteristics of vertical-cavity surface-emitting lasers
语种
英文
撰写或编译
作者
Xiaofeng Li,Wei Pan,Bin Luo,Ma Dong,Zhao Zheng,Deng Guo
第一作者单位
刊物名称
Semi...
An impact of a localization of an oxide aperture within a vertical-cavity surface-emitting diode laser (VCSEL) cavity on its lasing threshold
semiconductor laser vertical-cavity surface-emitting diode laser (VCSEL)
2011/4/27
In the present paper, an impact of localization of an oxide aperture within a vertical-cavity surface-emitting diode laser (VCSEL) on its threshold operation is analyzed. As expected, a shift of the a...
Simplified modelling of photonic-crystal-confined vertical-cavity surface-emitting diode lasers
photonic crystals vertical-cavity surface-emitting diode lasers (VCSELs) photonic-crystal-confined VCSELs simplified VCSEL modelling
2011/4/27
In standard GaAs-based oxide-confined vertical-cavity surface-emitting diode lasers (VCSELs), their transverse single-fundamental-mode operation is limited to relatively low outputs. It is a direct co...
Physical analysis of an operation of GaInAs/GaAs quantum-well vertical-cavity surface-emitting diode lasers emitting in the 1.3-μm wavelength range
semiconductor laser VCSEL GaInAs/GaAs QW
2011/4/26
Comprehensive three-dimensional self-consistent optical-electrical-thermal-gain physical modelling is used to simulate room-temperature continuous-wave performance characteristics of GaInAs/GaAs laser...
Some expected extraordinary behaviours of nitride vertical-cavity surface-emitting lasers following from special features of nitride materials
modelling nitride VCSELs interactions between physical phenomena
2011/4/25
In spite of dramatic efforts of numerous technological centres in the world, until now room-temperature continuous-wave operation of nitride diode vertical-cavity surface-emitting lasers (VCSEL) has n...
