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Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 μm CMOS Process
Avalanche Photodiodes Fabricated CMOS Process
2015/7/17
A Si APD was fabricated by standard 0.18 μ m CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain.