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An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this paper. By performing repeated oxidation and de-oxidation procedures by using AFM f...
Investigation of the topography of magnetron-deposited Cu/Ni multilayers by X-ray reflectometry and atomic force microscopy
multilayers Cu/Ni X-ray reflectometry (XRR)
2011/5/11
This paper presents the results of research of Cu/Ni multilayers magnetron-deposited on an Si (100) substrate. The thickness of Cu sublayers was identical in all multilayers and equalled 2 nm. The th...
We consider the problem of uncertainty in geometrically linear measurements in scanning probe microscopy (SPM) represented by atomic force microscopy (AFM). The uncertainties under consideration are a...
