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The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency o...
Indium incorporated silica samples with different indium contents were synthesized using a template free sol-gel method. The silica used was extracted from rice husk (RH) and the resulting catalyst wa...
Stratospheric ozone is normally measured using stationary equipments, such as a Dobson spectrometer and filter ozonometer, which have the disadvantages of large size, high price and high cost for oper...
Tin-doped indium oxide (ITO) has found widespread use in solar cells, displays, and touch screens as a transparent electrode; however, two major problems with ITO remain: high reflectivity (up t...
We report on the current state of large-scale and high functionality photonic integrated circuits on the InP platform for transmitters, receivers, and other device applications.
We report on development of large-scale and high functionality photonic integrated circuits on InP and Si platforms for transmitter, receiver, filtering and routing applications and discuss the merits...
Indian-tin-oxide ITO transparent conductive films were deposited by the Reactive low-voltage ion plating (RLVIP) technique. CO2 and O2 gases were used as reactive gases coming into the vacuum. The eff...
Indium tin oxide (ITO) thin films have been deposited onto polycarbonate substrates by ion beam assisted deposition technique at room temperature. The structural, optical and electrical properties of ...
Indium thin oxide (ITO) layers were deposited onto both surfaces of a glass substrate. One of the layers was a field electrode and negative voltage has been applied to it in order to create the intern...
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. ...
The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy...

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