搜索结果: 1-9 共查到“凝聚态物理学 gap”相关记录9条 . 查询时间(0.156 秒)
If they’re quick about it, “hot” electrons excited in a plasmonic metal can tunnel their way across a nanoscale gap to a neighboring metal. Rice University scientists said the cool part is what happen...
Unconventional Rotational Responses of Hadronic Superfluids in a Neutron Star Caused by Strong Entrainment and a Σ- Hyperon Gap
Neutron star spinning reaction model whirlpool proton vortex a charged condenser coil
2014/12/19
I show that the usual model of the rotational response of a neutron star, which predicts rotation-induced neutronic vortices and no rotation-induced protonic vortices, does not hold (i) beyond a certa...
Charged States and Band-Gap Narrowing in Codoped ZnO Nanowires for Enhanced Photoelectrochemical Responses
Charged States Band-Gap Narrowing Codoped ZnO Nanowires Enhanced Photoelectrochemical Responses
2012/2/27
By means of first-principles calculations within the density functional theory, we study the structural and optical properties of codoped ZnO nanowires and compare them with those of the bulk and film...
First principles investigation of Bi$_6$Ti$_4$O$_{17}$: oxide ferroelectricity with a low band gap
First principles investigation low band gap
2010/11/25
We report first principles studies of the hypothetical compound Bi6Ti4O17, which is an alternate stacking of the ferroelectric Bi4Ti3O12. We find that this compound is ferroelectric, similar to Bi4Ti3...
Direct observation of band-gap closure for a semiconducting carbon nanotube in a large parallel magnetic field
Direct observation of band-gap closure semiconducting carbon nanotube large parallel magnetic field
2010/11/23
We have investigated the magnetoconductance of semiconducting carbon nanotubes (CNTs) in
pulsed, parallel magnetic elds up to 60 T, and report the direct observation of the predicted band-gap closur...
Helical Edge Modes near Transition to Topological Insulator with Indirect Gap
topological insulator edge mode indirect gap particle-hole symmetry semimetal annihilator
2010/11/19
Helical edge modes are characteristic of topological insulators in two dimensions. This paper
demonstrates that helical edge modes remain across transitions to ordinary insulators or to semimetals un...
On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors
obtaining MOSFET-like performance sub-60 mV/decade
2010/11/25
Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far h...
Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
Non-linear behavior of Eg(T) Zero-point energy Temperature dependence of the gap Gallium arsenide
2010/6/30
In this work we report on a comparison of some theoretical models usually used to fit the dependence on temperature of the fundamental energy gap of semiconductor materials. We used in our investigati...
用赝势微扰法计算某些半导体的能带结构(用于GaAs,GaP和Ga[As1-xPx]合金)
2007/12/12
用赝势微扰法计算了GaAs,GaP和Ga[As1-xPx]合金的能带。赝势选择的原则是使计算所得直接能隙和间接能隙与实验值相符合。计算结果表明,不但能带次序准确,而且与室温下的实验值符合得很好。基于由GaAs到GaP晶格常数和赝势是线性变化的假设,计算了GaP含量为20％,50％和80％时Ga[As1-xPx]合金的能带。当GaP含量为41％时,直接能隙和间接能隙相等,这一数值刚好是Spitzer...