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Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Interface Trap Density Metrology state-of-the-art undoped Si n-FinFETs
2010/11/22
The presence of interface states at the MOS interface is a well-known cause of device gradation.This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can stron...
DMRG Studies on Properties of Undoped and Doped Molecule-Based Ferromagnetic
Chain
DMRG antiferromagnetic exchange SDW spin density undoped doped
2007/8/15
2005Vol.44No.6pp.1099-1102DOI:
DMRG Studies on Properties of Undoped and Doped Molecule-Based Ferromagnetic
Chain
YAO Kai-Lun,1,2 QIN Yi,1 LIU Qing-Mei,1 and LIU Zu-Li1
...
