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Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures
magnetic resonance donor spins in silicon quantum computing
2010/10/27
Phosphorus donor spin coherence in isotopically pure 28 silicon is measured at very low temperatures using pulsed electron spin resonance. The isolated spin T2 varies unexpectedly with phosphorus conc...
Spatial Non-uniformity Measurements of Large Area Silicon Photodiodes
Photometry Silicon Photodiode Spatial Uniform
2010/4/13
Accurate determination of the responsivity of silicon photodiodes are highly desired in photometry. The change of responsivity over the surface, the so-called spatial non-uniformity, effects power mea...
Comparison study of the charge density distribution induced by heavy ions and pulsed lasers in silicon
heavy ion pulsed laser charge density distribution
2009/12/24
Heavy ions and pulsed lasers are important means to simulate the ionization damage effects on semiconductor materials. The analytic solution of high-energy heavy ion energy loss in silicon has been ob...
The Role of Silicon Oxide Layers in Luminescence of
Ensembles of Silicon Quantum Dots
silicon oxide layer quantum dot luminescence
2007/8/15
2001Vol.35No.3pp.371-380DOI:
The Role of Silicon Oxide Layers in Luminescence of
Ensembles of Silicon Quantum Dots
WANG Si-Hui,1,2 QIN Guo-Yi,1 REN Shang-Fen3 and
QIN Guo-Gang4,5
...
期刊信息
篇名
Direct evdence of quantum confinement evaluated from size-dependence of the photoluminescence of silicon quantum wires
语种
英文
撰写或编译
作者
D.P.Yu
第一作者单位
刊物名称
physical Review
页面
1999,Vol.59(4)2498
出...
The Determination of Thermal Annealing Effect on a-Si:H Films Coated on Glass and on Single Crystalline of Silicon
Thermal Annealing Effect a-Si:H Films Silicon
2010/4/13
The aim of this study was to examine the effect of thermal annealing on hydrogenated intrinsic amorphous silicon a-Si:H films. Hydrogenated intrinsic amorphous films were seperately coated on glass an...