搜索结果: 1-13 共查到“理论物理学 Si”相关记录13条 . 查询时间(0.127 秒)
Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs
Interface Trap Density Metrology state-of-the-art undoped Si n-FinFETs
2010/11/22
The presence of interface states at the MOS interface is a well-known cause of device gradation.This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can stron...
Strain determination in the Si channel above a single SiGe island inside a field effect transistor using nanobeam x-ray diffraction
Strain determination Si channel field effect transistor
2010/11/24
SiGe islands are used to induce tensile strain in the Si channel of Field Eect Transistors to achieve larger transconductance and higher current driveabilities. We report on x-ray diraction experime...
Physical mechanisms of interface-mediated intervalley coupling in Si
Physical mechanisms interface-mediated intervalley coupling Si
2010/4/16
The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface wi...
A Modified Earthquake Model Based on Generalized Barabási-Albert
Scale-Free Networks
self-organized criticality avalanche GBA scale-free networks
2007/8/15
2006Vol.46No.6pp.1011-1016DOI:
A Modified Earthquake Model Based on Generalized Barabási-Albert
Scale-Free Networks
LIN Min,1 WANG Gang,2,3 and CHEN Tian-Lun4
1 Departme...
Dual Space Analyzing Based on Symmetry Properties for
Phonons fo Si Quantum Dot
phonon modes quantum dots dual space analyzing
2007/8/15
2002Vol.38No.1pp.91-98DOI:
Dual Space Analyzing Based on Symmetry Properties for
Phonons fo Si Quantum Dot
QIN Guo-Yi,1 REN Shang-Fen,2 and ZHANG Zhi-Yong3
1 Department ...
Molecular Dynamics Study of Effects of Si-Doping Upon
Structure and Mechanical Properties of Carbon Nanotube
molecular dynamics simulation carbon nanotubes Young's modulus Si-doping
2007/8/15
2006Vol.45No.4pp.741-744DOI:
Molecular Dynamics Study of Effects of Si-Doping Upon
Structure and Mechanical Properties of Carbon Nanotube
SONG Hai-Yang, SUN He-Ming, and ZHANG Guo...
Initial Processes of Sulfur Adsorption on Si(100) Surface
sulfur silicon chemisorption supercell interaction
2007/8/15
2005Vol.44No.4pp.724-726DOI:
Initial Processes of Sulfur Adsorption on Si(100) Surface
MA Li, WANG Jian-Guang, and WANG Guang-Hou
National Laboratory of Solid State Micr...
Initial Processes of Hydrogen Adsorption on Si(100) Surface
hydrogen silicon chemisorption supercell interaction
2007/8/15
2004Vol.42No.5pp.795-797DOI:
Initial Processes of Hydrogen Adsorption on Si(100) Surface
MA Li,1 WANG
Jian-Guang,2 WEI
Shu-Yi,2 and WANG Guang-Hou1
1 National Laborato...
期刊信息
篇名
Field emission from suface quantum well of Si
语种
英文
撰写或编译
作者
黄庆安
第一作者单位
刊物名称
Appl.Surf .Sci
页面
1996,Vol.93,P77
出版日期
1996年
月
日
文章标识(ISSN)
相关项目
真空微电子微波三极管的理论与实验研究
期刊信息
篇名
Optical studies of ZnO quantum dots grown on Si(001)
语种
英文
撰写或编译
作者
Wu HZ(吴惠桢),Qiu DJ,Cai YJ,et al
第一作者单位
刊物名称
JOURNAL OF CRYSTAL GROWTH
页面
245 (1-2): 50-55 NOV
出版日期
2002年
月
日
文章标识(ISSN)
相关项目
...
期刊信息
篇名
Electric Properties of Ge Quantum Dot Embedded in Si Matrix
语种
英文
撰写或编译
撰写
作者
Xiying Ma,Wei Lin Shi
第一作者单位
绍兴文理学院
刊物名称
J. Central south university of technology
页面
V12(2)159-162.
出版日期
2006年
12...
AMPS-1D Modeling of a-Si:H n+-i-n+ Structure: the Validity of Space Charge Limited Current Analysis
AMPS-1D Hydrogenated amorphous silicon n+-i-n+ structure SCLC activation energy
2010/4/12
In this paper, the AMPS-1D (Analysis of Microelectronic and photonic structure) simulation program is used to understand the origin of the differences observed in Space Charge Limited Current (SCLC) a...
The Determination of Thermal Annealing Effect on a-Si:H Films Coated on Glass and on Single Crystalline of Silicon
Thermal Annealing Effect a-Si:H Films Silicon
2010/4/13
The aim of this study was to examine the effect of thermal annealing on hydrogenated intrinsic amorphous silicon a-Si:H films. Hydrogenated intrinsic amorphous films were seperately coated on glass an...