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Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells
GaAs/Ge solar cells displacement damage dose carbon ion proton irradiation
2009/8/14
Displacement damage dose is applied to analyze the irradiation effects of 2 MeV carbon ions and 0.28~20 MeV protons on homemade GaAs/Ge solar cells. The NIEL for each ion is modified by taking into a...
Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation
heavy ion irradiation, carbon ion implantation, photoluminescence (PL) spectra
2009/8/14
Amorphous SiO2 thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carb...