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Growth optical and magnetic properties of Cd1-xFexS films prepared on Al2O3 (0001)
Diluted magnetic semiconductor CdFeS Band gap
2011/12/8
Diluted magnetic semiconductor Cd1−xFexS (0bxb0.4) films were grown by the low-pressure metal organic chemical vapor deposition on c-Al2O3 substrates. All the films were fabricated at 633 K unde...
Characterization of Cd1−xFexS diluted magnetic semiconductors grown at near phase conversion temperature
A. Cd1− xFexS D. Phase conversion D. Van Vleck-type paramagnetism
2011/12/8
Fe-based cadmium sulfide alloy thin films have been grown on c-plane sapphire substrates by a low-pressure metalorganic chemical vapor deposition technique at different growth temperatures. From X-ray...
Characterization of Cd1-xFexS diluted magnetic semiconductors grown at near phase conversion temperature
A. Cd1-xFexS D. Phase conversion D. Van Vleck-type paramagnetism
2011/12/15
Fe-based cadmium sulfide alloy thin films have been grown on c-plane sapphire substrates by a low-pressure metalorganic chemical vapor deposition technique at different growth temperatures. From X-ray...
